View APT5012_42236.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT5012WVR
500V 40A 0.120
POWER MOS V (R)
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
V(R)
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * New TO-267 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT5012WVR UNIT Volts Amps
500 40 160 30 40 450 3.6 -55 to 150 300 40 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 40 0.120 25 250 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5805 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5012WVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT
7400 1000 380 312 50 127 14 16 54 5
8900 1400 570 470 75 190 30 32 80 10
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
40 160 1.3 620 14.7
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.28 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.13mH, R = 25, Peak I = 40A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.2 0.05 0.1 0.05
PDM
0.01 0.005
Note: 0.02 0.01 SINGLE PULSE
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC t1
050-5805 Rev A
Z 0.001 10-5
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT5012WVR
100 ID, DRAIN CURRENT (AMPERES) VGS=7V, 8V, 10V & 15V 100 6V ID, DRAIN CURRENT (AMPERES) 80 VGS=15V 6V VGS=7V, 8V & 10V 5.5V
80
60
5.5V
60
40
5V
40
5V
20 4.5V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
20 4.5V 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100 ID, DRAIN CURRENT (AMPERES)
TJ = -55C TJ = +25C TJ = +125C
1.5
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
80
1.4 1.3 1.2 VGS=10V 1.1 1.0 0.9 VGS=20V
60
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
40 TJ = +125C TJ = +25C 0 TJ = -55C
20
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 40 ID, DRAIN CURRENT (AMPERES)
0
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
32
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I = 0.5 I [Cont.]
D D
1.15
1.10
24
1.05
16
1.00
8
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
V
0
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.90
-50
GS
= 10V
2.0
1.1 1.0
1.5
0.9 0.8 0.7 050-5805 Rev A
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT5012WVR
200 100 ID, DRAIN CURRENT (AMPERES) 50
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
30,000
10,000 C, CAPACITANCE (pF) 1mS 5,000
Ciss
10 5 10mS 100mS DC
Coss 1,000 500 Crss
1 .5 TC =+25C TJ =+150C SINGLE PULSE
.1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 TJ =+150C TJ =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
16
VDS=100V VDS=250V
12 VDS=400V 8
10 5
4
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-267 Package Outline
20.45 (.805) 20.20 (.795) 10.23 (.403) 10.10 (.398)
1.80 (.071) 1.25 (.049)
4.19 (.165) 3.95 (.156) 24.15 (.951) 23.60 (.929) 16.90 (.665) 16.40 (.646) 20.32 (.800) 20.07 (.790)
Drain
19.05 (.750) 12.70 (.500)
Source Gate
4.20 (.165) BSC 7.40 (.291) 6.60 (.260)
050-5805 Rev A
1.65 (.065) Dia. Typ. 1.40 (.055) 3 Leads 5.00 (.197) BSC
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

▲Up To Search▲

Price & Availability of APT5012

	To Download APT5012 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .